? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c32 a i dm t c = 25 c, pulse width limited by t jm 80 a i a t c = 25 c16 a e as t c = 25 c 2 j dv/dt i s i dm , v dd v dss , t j 150 c 15 v/ns p d t c = 25 c 960 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g ixfk32n90p IXFX32N90P n-channel enhancement mode avalanche rated fast intrinsic rectifier v dss = 900v i d25 = 32a r ds(on) < 300m ds100387(9/11) advance technical information g = gate d = drain s = source tab = drain plus247 (ixfx) tab g d s to-264 (ixfk) s g d tab polar tm hiperfet tm power mosfets features z low r ds(on) and q g z avalanche rated z low package inductance z fast intrinsic rectifier advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 900 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 300 m
ixys reserves the right to change limits, test conditions, and dimensions. ixfk32n90p IXFX32N90P ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 13 22 s c iss 10.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 750 pf c rss 140 pf r gi gate input resistance 1.1 t d(on) 48 ns t r 80 ns t d(off) 68 ns t f 26 ns q g(on) 215 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 80 nc q gd 98 nc r thjc 0.13 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.9 c i rm 14 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-264 outline plus247 tm outline terminals: 1 - gate 2 - drain 3 - source 4 - drain terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. i f = 16a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2011 ixys corporation, all rights reserved ixfk32n90p IXFX32N90P fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 012345678 v ds - volts i d - amperes v gs = 10v 9v 8 v 7 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 6 v 7 v 8 v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 28 32 0 2 4 6 8 1012141618 v ds - volts i d - amperes 6 v 5v v gs = 10v 8v 7 v fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 32a i d = 16a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 10203040506070 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfk32n90p IXFX32N90P fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.30.40.50.60.70.80.91.01.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 q g - nanocoulombs v gs - volts v ds = 450v i d = 16a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2011 ixys corporation, all rights reserved ixys ref: ixf_32n90p(86) 9-27-11 ixfk32n90p IXFX32N90P fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13 maximum transient thermal impedance sdasd 0.3
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